reverse v oltage: 50 - 1000 volts forward current: 1.0 amp curl101 thru curl107 parameter max. repetitive peak reverse voltage max. dc blocking voltage max. rms v oltage peak surge forward current 8.3ms single half sine-wave superimposed on rate load ( jedec method ) max. average forward current max. instantaneous forward current at 1.0 a reverse recovery time max. dc reverse current at rated dc blocking voltage ta=25 ta=100 max. thermal resistance (note 1) operating junction t emperature storage t emperature symbol v rrm v dc v rms i fsm i o v f trr i r r ja t j t stg maximum ratings and electrical characterics unit v v v a a v ns ua mds0210011b page 1 note 1: thermal resistance from junction to ambient. curl 101 curl 102 50 50 35 600 600 420 100 100 70 30 1.0 1.3 -55 to +150 60 5.0 100 -55 to +150 curl 107 curl 106 curl 105 curl 104 curl 103 800 800 560 400 400 280 smd ultra fast recovery rectifier smd ultra fast recovery rectifier 200 200 140 features ideal for surface mount applications easy pick and place plastic package has underwriters lab. flammability classification 94v-0 ultra fast recovery time: 50 - 75 ns low leakage current mechanical data case: do-213ab molded plastic t erminals: solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any approx. weight:0.1 16 gram 1.0 1.7 1000 1000 700 75 50 c/w c c c c dim en sio ns i n in che s an d (m illim ete rs) 0.205(5.2) 0.195(4.8) 0.022(0.55) max. 0.105(2.67) 0.095(2.40) do-213ab (plastic melf) www.comchiptech.com c o m c h ip c o m c h ip
rating and characteristic curves (curl101 thru curl107) f o r w a r d c u r r e n t ( a ) forw ard vol tage ( v) fig.2 - fo rward c harac terist ics 0.1 1.0 10 100 1000 10 mds0210011b page 2 fig. 3 - junc tion cap acita nce reverse voltage (v) 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 1 .6 1 .8 2 .0 2 .2 2 .4 j u n c t i o n c a p a c i t a n c e ( p f ) 0 20 30 70 60 50 40 smd ultra fast recovery rectifier smd ultra fast recovery rectifier 0.1 10 1.0 0.0 1 0.0 01 fig. 5 - test circuit di agram a nd reve rse rec overy tim e chara cteris tics (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive w notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 50 / 10ns / cm trr d.u.t. 10 noninductive 50 noninductive w w fig. 6 - curren t de rating curve single phase half wave 60hz a v e r a g e f o r w a r d c u r r e n t ( a ) ambient t emperature ( c) 0 25 50 75 100 125 150 175 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 1000 100 10 1.0 0.1 percent of rated peak reverse v oltage (%) r e v e r s e c u r r e n t ( u a ) fig. 1 - reve rse cha racter istics tj=25 c tj=125 c tj=25 c pulse width 300us 4% duty cycle c u r l 1 0 1 - 1 0 3 c u r l 1 0 4 c u r l 1 0 5 -1 0 7 =1mhz and applied 4vdc reverse voltage p e a k s u r g e f o r w a r d c u r r e n t ( a ) fig. 4 - non re petiti ve forw ard su rge cur rent 30 25 20 15 10 5 0 1 5 10 50 1 00 tj=25 c 8.3ms single half sine wave jedec methode cu rl 10 1-1 04 cu rl 10 5-1 07 www.comchiptech.com c o m c h ip c o m c h ip
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